NGADERMAN, H.; SINAGA, E. S. Model of Metal-Oxide-Semiconductor Contact Characteristics and Carrier Impurity Concentration in Depletion and Oxide Regions. Jurnal Fisika Papua, [S. l.], v. 3, n. 2, p. 64–70, 2024. DOI: 10.31957/jfp.v3i2.196. Disponível em: https://ejurnal.fmipa.uncen.ac.id/index.php/visika/article/view/196. Acesso em: 23 oct. 2024.